Paper Titles

Defect Production and Annealing in Degenerate Silicon Irradiated with fast Electrons at Low Temperatures
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Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450°C
p.157

Impurity Centers Associated with Magnesium Introduced in Silicon by Fast Neutron Transmutation Reactions
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EPR and IR Absorption of Defects in Isotopically Enriched Germanium
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NMR Study of Impurity Electronic Structure and Dynamics
p.173

Native Point Defect Equilibria and the Phase Extent of Gallium Arsenide
p.179

The Role of Point Defects in Non-Stoichiometric III-V Compounds
p.189

Intrinsic Acceptors in Semi-Insulating Galliumarsenide Studied by Positron Annihilation and ODMR
p.195

Bound Exciton Spectra in Semi-Insulating GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201NMR Study of Impurity Electronic Structure and...

NMR Study of Impurity Electronic Structure and Dynamics

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

173-178

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.173

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Online since:

November 1995

Authors:

W.W. Warren, S.E. Fuller, A. Göbel, U. Bindley, J.K. Furdyna

Keywords:

CdTe, Impurity Band, Impurity States, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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