Paper Titles

NMR Study of Impurity Electronic Structure and Dynamics
p.173

Native Point Defect Equilibria and the Phase Extent of Gallium Arsenide
p.179

The Role of Point Defects in Non-Stoichiometric III-V Compounds
p.189

Intrinsic Acceptors in Semi-Insulating Galliumarsenide Studied by Positron Annihilation and ODMR
p.195

Bound Exciton Spectra in Semi-Insulating GaAs
p.201

Oscillations in PLE Spectra of Li Passivated GaAs, Related to Interstitial Li Donors
p.207

Magneto-Optical and Odendor Investigations of the Substitutional Oxygen Defect in Galliumarsenide
p.213

Identification of Phonon Scattering Resonances with Defects in Gallium Arsenide
p.219

Photoluminescence of Germanium Doped Gallium Arsenide
p.225

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Bound Exciton Spectra in Semi-Insulating GaAs

Bound Exciton Spectra in Semi-Insulating GaAs

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

201-206

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.201

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Online since:

November 1995

Authors:

H.P. Gislason, B.H. Yang

Keywords:

Bound Exciton, Lithium, Semi-Insulating GaAs

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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