HOME CONTACT

Username: Password:

> @scientific.net

Theoretical and Technological Aspects of Crystal Growth

Materials Science Forum Volumes 276 - 277

• Papers
• Abstracts

• p1 Elements of Thermodynamics for the Understanding and Design of Crystal Growth Processes   [ 1 M ]
  Authors: P. Rudolph
• p27 Flow-Dynamics and Morphological Stability   [ 2 M ]
  Authors: D.T.J. Hurle
• p57 Step and Surface Roughening - An Introduction   [ 664 K ]
  Authors: A.A. Chernov
• p71 Step Kinetics by One-Dimensional 'Nucleation'   [ 392 K ]
  Authors: A.A. Chernov
• p79 Subsurface Ordering and Kinetic Coefficient for Melt Growth   [ 409 K ]
  Authors: A.A. Chernov
• p87 Melt Growth of Semiconductors   [ 1 M ]
  Authors: Georg Müller
• p109 Melt Growth of Semiconductor Crystals in Microgravity Conditions   [ 496 K ]
  Authors: K.W. Benz, A. Cröll
• p119 Large-Scale Numerical Modeling of Continuum Phenomena in Melt and Solution Crystal Growth Processes   [ 1001 K ]
  Authors: J.J. Derby, K. Edwards, Y.I. Kwon, J.C. Rojo, B. Vartak, A. Yeckel
• p135 Modeling of Growth Processes in Epitaxial Reactors   [ 1 M ]
  Authors: S. Carrà, C. Cavallotti, Maurizio Masi
• p153 Principles of VPE and MOVPE and Applications   [ 1 M ]
  Authors: N. Lovergine