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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Effect of Plasma Etching and Sacrificial Oxidation...

Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1199-1202

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1199

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Online since:

May 2000

Authors:

D.J. Morrison, A.J. Pidduck, V. Moore, P.J. Wilding, Keith P. Hilton, Michael J. Uren, C. Mark Johnson

Keywords:

Electrical Characterisation, Reactive Ion Etching, Sacrificial Oxidation, X-Ray Photoelectron Spectroscopy (XPS)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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