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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Impact of SiC Source Material on Temperature Field...

Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

11-14

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.11

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Online since:

January 2001

Authors:

Peter J. Wellmann, Dieter Hofmann, L. Kadinski, M. Selder, Thomas L. Straubinger, Albrecht Winnacker

Keywords:

Numerical Modeling, Physical Vapor Transport, Silicon Carbide (SiC), Source Material, X-Ray Imaging

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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