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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393High-Temperature Performance of 10 Kilovolts, 200...

High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1265-1268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1265

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Online since:

April 2002

Authors:

Ranbir Singh, Kenneth G. Irvine, Jim Richmond, John W. Palmour

Keywords:

Diode, High-Temperature, PiN, Pulsed, Rectifier, Reverse Recovery, Silicon Carbide (SiC), Ultra-High Voltage (UHV)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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