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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393On the Preparation of Vanadium-Doped...

On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

139-142

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.139

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Online since:

April 2002

Authors:

Matthias Bickermann, Dieter Hofmann, Thomas L. Straubinger, Roland Weingärtner, Albrecht Winnacker

Keywords:

Boron Doping, Bulk Growth, Dopant Homogeneity, Hall-Effect, Resistivity Mapping, Semi-Insulating SiC, Vanadium Doping

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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