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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393QuaSiC Smart-Cut® Substrates for SiC High Power...

QuaSiC Smart-Cut^® Substrates for SiC High Power Devices

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

151-154

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.151

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Online since:

April 2002

Authors:

Fabrice Letertre, E. Jalaguier, Lea Di Cioccio, Francois Templier, Jean Marie Bluet, C. Banc, Igor Matko, Bernard Chenevier, Edwige Bano, Gérard Guillot, Thierry Billon, B. Aspar, Roland Madar, B. Ghyselen

Keywords:

4H-SiC, SiC CVD Epitaxy, Smart-Cut^®, Tungsten Silicide, Wafer Bonding

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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