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Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography
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Structural Defects in Electrically Degraded 4H-SiC PiN Diodes
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Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
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Optical Emission Microscopy of Structural Defects in 4H-SiC PiN Diodes
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Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Propagation of Current-Induced Stacking Faults and...

Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

427-430

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.427

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Online since:

April 2002

Authors:

Robert E. Stahlbush, Jeffery B. Fedison, Steve Arthur, L.B. Rowland, James W. Kretchmer, Shao Ping Wang

Keywords:

Current Degradation, Electroluminescence, PiN Diode, Stacking Fault

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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