Paper Titles

Growth and Defect Reduction of Bulk SiC Crystals
p.29

Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport
p.35

Lateral Enlargement of Silicon Carbide Crystals
p.39

Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth
p.43

4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots
p.47

The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity
p.51

Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC
p.55

Reduction of Macrodefects in Bulk SiC Single Crystals
p.59

Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals
p.63

HomeMaterials Science ForumMaterials Science Forum Vols. 389-3934H Polytype Grain Formation in PVT-Grown 6H-SiC...

4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

47-50

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.47

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Online since:

April 2002

Authors:

Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani, Takashi Aigo, Hirokatsu Yashiro

Keywords:

Crystal Orientation, Multi-Domain Ingot, X-Ray Pole Figure

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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