Paper Titles

Lateral Enlargement of Silicon Carbide Crystals
p.39

Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth
p.43

4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots
p.47

The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity
p.51

Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC
p.55

Reduction of Macrodefects in Bulk SiC Single Crystals
p.59

Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals
p.63

Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes
p.67

The Nucleation of Polytype Inclusions during the Sublimation Growth of 6H and 4H Silicon Carbide
p.71

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Evolution of Crystal Mosaicity during Physical...

Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

55-58

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.55

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Online since:

April 2002

Authors:

Masakazu Katsuno, Noboru Ohtani, Tatsuo Fujimoto, Takashi Aigo, Hirokatsu Yashiro

Keywords:

Crystal Mosaicity, Physical Vapor Transport Growth, Polytype Instabilities

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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