Paper Titles
PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals
p.55
Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC
p.59
Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method
p.63
Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
p.67
Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC
p.71
Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation
p.75
Continuous Growth of SiC Single Crystal from Ultrafine Particle Precursor
p.79
Defect Reduction in SiC Crystals Grown by the Modified Lely Method
p.83
A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process
p.87

Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

71-74

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.71

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Online since:

September 2003

Authors:

H. Tanaka, Taro Nishiguchi, Makato Sasaki, Satoru Ohshima, Shigehiro Nishino

Keywords:

Diameter Expansion, Sublimation, Tantalum, Temperature Gradient

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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