Paper Titles
Modelling of Radiation Response of p-Channel SiC MOSFETs
p.761
Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET
p.765
4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications
p.769
Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs
p.773
Optimisation of a 4H-SiC Enhancement Mode Power JFET
p.777
Electro-Thermal Simulations and Measurement of Silicon Carbide Bipolar Transistors
p.781
Power Amplification in UHF Band Using SiC RF Power BJTs
p.785
Demonstration of Monolithic Darlington Transistors in 4H-SiC
p.789
High-Voltage Modular Switch Based on SiC VJFETs - First Results for a Fast 4.5kV/1.2Ω Configuration
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Optimisation of a 4H-SiC Enhancement Mode Power JFET

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

777-780

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.777

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Online since:

September 2003

Authors:

Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright, Anthony G. O'Neill

Keywords:

Enhancement Mode, Junction Field Effect Transistor (JFET), Optimization, TCAD Simulation

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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References

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