Paper Titles
Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K
p.1437
Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs
p.1441
SiC JMOSFETs for High-Temperature Stable Circuit Operation
p.1445
Advanced Processing Techniques for Silicon Carbide MEMS and NEMS
p.1451
Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC
p.1457
Porous Silicon Carbide as a Membrane for Implantable Biosensors
p.1463
Triangular Pore Formation in Highly Doped n-Type 4H SiC
p.1467
Porous Structure of Anodized p-Type 6H SiC
p.1471
Vibrational and Emission Properties of Porous 6H-SiC
p.1475

Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC

Article Preview

Abstract:

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2003 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1457-1462

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1457

Citation:

Cite this paper

Online since:

June 2004

Authors:

Hans Jürgen von Bardeleben, J.L. Cantin, Y. Shishkin, Robert P. Devaty, Wolfgang J. Choyke

Keywords:

Carbon Dangling Bond Center, EPR, Interface Defects, Oxide Interface

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] for a recent review see the Proceedings of the European Conference on Silicon Carbide and Related Materials, ECSCRM 2002, Materials Science Forum 433-436 (2003).

Google Scholar

[2] I. Vickridge,I. Trimaille J.J. Ganem,S. Rigo,C. Radtke, I.R. Baumvol F.C. Stedile, Phys. Rev. Lett. Vol. 89 (2002), p.256102.

DOI: 10.1103/physrevlett.89.256102

Google Scholar

[3] F. Amy, P. Soukassian Y.K. Hwu,C. Brylinski, Phys. Rev. B Vol. 65 (2002), p.165323.

Google Scholar

[4] V.V. Afanas'ev, Microelectronic Engineering Vol. 48, (1999) p.241.

Google Scholar

[5] E.H. Poindexter P.J. Caplan B.E. Deal R.R. Razouk, J. Appl. Phys. Vol. 52, (1981) p.879.

Google Scholar

[6] J.L. Cantin,M. Schoisswohl H.J. von Bardeleben EPR Characterisation of Porous Si and SiGe" , Chapter 15 of , Structural and Optical Properties of Porous Silicon Nanostructures ed. by G. Amato,C. Delerue H.J. von Bardeleben, Gordon&Breach (1997).

DOI: 10.1063/1.114132

Google Scholar

[7] P.J. MacFarlane, M.E. Zvanut, Appl. Phys. Lett. Vol. 21, (1997) p.2148.

Google Scholar

[8] P.J. MacFarlane M.E. Zvanut, J. of Electonic Materials Vol. 28, (1999) p.144.

Google Scholar

[9] P.J. MacFarlane M.E. Zvanut, J. of Appl. Phys. Vol. 88, (2000) p.4122.

Google Scholar

[10] P.J. MacFarlane M.E. Zvanut G.M. Janowski, J. of Appl. Phys. Vol. 89, (2001) p.955.

Google Scholar

[11] H.J. von Bardeleben J.L. Cantin,M. Mynbaeva S.E. Saddow, Materials Science Forum 433- 436, 495 (2003).

DOI: 10.4028/www.scientific.net/msf.433-436.495

Google Scholar

[12] H.J. von Bardeleben J.L. Cantin, M. Mynbaeva, S.E. Saddow, Y. Shishkin, R.P. Devaty, W.J. Choyke, Electrochemical Society Proceedings Vol. 2003-02, (2003) p.39.

Google Scholar

[13] Y. Shishkin W.J. Choyke, R.P. Devaty, these proceedings.

Google Scholar

[14] V.V. Afanasev,M. Basler,G. Pensl,M. Schulz, Phys. Stat. Sol. (a) Vol. 162 (1997), p.321.

Google Scholar

[15] H. Kobayashi,T. Sakurai,M. Takahashi,Y. Nishioka, Phys. Rev. B Vol. 67 (2003), p.115305.

Google Scholar