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Formation of SiC/Si Multilayer Structures on Si(100) by Supersonic Free Jets of Single Gas Source CH3SiH3
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Growth of SiC Nanorods and Microcrystals by Carbon Nanotubes-Confined Reaction
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Modelling and Regrowth Mechanisms of Flashlamp Processing of SiC-on-Silicon Heterostructures
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Structural Defects in SiC Crystals Investigated by High Energy X-Ray Diffraction
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TEM Observations of 4H-SiC Deformed at Room Temperature and 150°C
p.343
TEM Studies on the Initial Stage of Seeded Solution Growth of 6H-SiC using Metal Solvent
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Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp Process
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Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron Microscopy
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TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes
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TEM Observations of 4H-SiC Deformed at Room Temperature and 150°C

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

343-346

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.343

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Online since:

June 2004

Authors:

Jean Luc Demenet, X. Milhet, Jacques Rabier, P. Cordier

Keywords:

4H-SiC, High-Pressure, Partial Dislocations, Perfect Dislocation, Plasticity

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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