Paper Titles
TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes
p.359
X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface
p.363
Structural Transformation of Dislocated Micropipes in Silicon Carbide
p.367
Deformation of 4H-SiC Single Crystals Oriented for Prism Slip
p.371
Inelastic Stress Relaxation in Single Crystal SiC Substrates
p.375
Dependence of Micropipe Dissociation on Surface Orientation
p.379
Analysis of Threading Dislocations in Wide-Bandgap Hexagonal Semiconductors by Energetic Approach
p.383
Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H
p.387
Reconstruction of Cleaved 6H-SiC Surfaces
p.391

Inelastic Stress Relaxation in Single Crystal SiC Substrates

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

375-378

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.375

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Online since:

June 2004

Authors:

Robert S. Okojie

Keywords:

4H-SiC, 6H-SiC, Annealing, Thermal Stress, Thermoplasticity

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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