Paper Titles
Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique
p.47
Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single Crystals
p.51
Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide
p.55
Thermodynamic Analysis of the Production of Silicon Carbide via Silicon Dioxide and Carbon
p.59
Faceted Growth of SiC Bulk Crystals
p.63
Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth
p.67
Free Growth of 4H-SiC by Sublimation Method
p.71
Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC Crystals
p.75
Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality
p.79

Faceted Growth of SiC Bulk Crystals

Article Preview

Abstract:

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2003 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

63-66

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.63

Citation:

Cite this paper

Online since:

June 2004

Authors:

I.D. Matukov, D.S. Kalinin, M.V. Bogdanov, S.Yu. Karpov, D.Kh. Ofengeim, M.S. Ramm, J.S. Barash, E.N. Mokhov, A.D. Roenkov, Yu.A. Vodakov, M.G. Ramm, Heikki Helava, Yuri Makarov

Keywords:

Faceting, SiC Bulk Growth

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] Yu.A. Vodakov, A.D. Roenkov, M.G. Ramm, E.N. Mokhov and Yu.N. Makarov: Phys. Stat. Sol. (b) Vol. 202 (1997), p.177.

DOI: 10.1002/1521-3951(199707)202:1<177::aid-pssb177>3.0.co;2-i

Google Scholar

[2] E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, Yu.A. Vodakov, S. Yu. Karpov, Yu.N. Makarov and H. Helava: Mat. Sci. Forum Vol. 433-436 (2003), p.29.

DOI: 10.4028/www.scientific.net/msf.433-436.29

Google Scholar

[3] Z.G. Herro, B.M. Epelbaum, M. Bickermann, P. Masri and A. Winnnacker: Presented at the ICSCRM-2003. To be published in Mat. Sci. Forum (2004).

Google Scholar

[4] Z.G. Herro, B.M. Epelbaum, M. Bickermann, P. Masri, C. Seitz, A. Magerl and A. Winnacker: Presented at the ICSCRM-2003. To be published in Mat. Sci. Forum (2004).

DOI: 10.4028/www.scientific.net/msf.457-460.111

Google Scholar

[5] M. V. Bogdanov, S. E. Demina, S. Yu. Karpov, A. V. Kulik, D. Kh. Ofengeim, M. S. Ramm, E. N. Mokhov, A. D. Roenkov, Yu. A. Vodakov, Yu. A. Makarov and H. Helava: Mat. Res. Soc. Proc. Vol. 742 (2003), p.23.

DOI: 10.1557/proc-742-k1.3

Google Scholar

[6] M.V. Bogdanov, A.O. Galyukov, S. Yu. Karpov, A.V. Kulik, S.K. Kochuguev, D. Kh. Ofengeim, A.V. Tsirulnikov, M.S. Ramm, A.I. Zhmakin and Yu.N. Makarov: J. Cryst. Growth, Vol. 225 (2001), p.307.

DOI: 10.1016/s0022-0248(01)00879-x

Google Scholar

[7] M. Selder, L. Kadinski, Yu. Makarov, F. Durst, P. Wellmann, T. Straubinger, D. Hofmann, S. Karpov and M. Ramm: J. Crystal Growth Vol. 211 (2000), p.333.

DOI: 10.1016/s0022-0248(99)00853-2

Google Scholar

[8] V. Prasad, Q. -S. Chen and H. Zhang: J. Crystal Growth Vol. 299 (2001), p.510.

Google Scholar

[9] Yu.A. Vodakov, M.G. Ramm, E.N. Mokhov, A.D. Roenkov, Yu.N. Makarov, S. Yu. Karpov, M.S. Ramm and H. Helava: US Patent 6, 428, 621 (2002).

DOI: 10.4028/www.scientific.net/msf.433-436.29

Google Scholar

[10] W.K. Burton, N. Cabrera and F.C. Frank: Phil. Trans. R. Soc. Vol. A243 (1951), p.299.

Google Scholar

[11] I.D. Matukov, D.S. Kalinin, M.V. Bogdanov, S. Yu. Karpov, D. Kh. Ofengeim, M.S. Ramm J.S. Barash, E.N. Mokhov, A.D. Roenkov, Yu.A. Vodakov M.G. Ramm, H. Helava and Yu.N. Makarov: Book of abstarcts IWMCG-4, Submitted for publication in J. Crystal Growth (2003).

DOI: 10.1016/j.jcrysgro.2004.02.060

Google Scholar

[12] T. Kimoto, H. Nishino, W.S. Yoo and H. Matsunami: J. Appl. Phys. Vol 73 (1993), p.726.

Google Scholar