[1]
see, i. e. J.R. Waldrop, J. Appl. Phys. 75 (1994), 4548; G. Myburg and F.D. Auret, Appl. Phys. Lett. 60 (1992), 604.
Google Scholar
[2]
M.E. Samiji, E. van Wyk, L. Wu, A. Venter, and A.W.R. Leitch, Mat. Sci. For. 353-3 (2000), 607.
Google Scholar
[3]
J. Grillenberger, N. Achtziger, G. Pasold, W. Witthuhn, Mat. Sci. For. 389-3 (2002), 573.
Google Scholar
[4]
N. Achtziger, H. Gottschalk, T. Licht, J. Meier and M. Rüb, U. Reislöhner and W. Witthuhn, Appl. Phys. Lett. 66 (1995), 2370.
DOI: 10.1063/1.113986
Google Scholar
[5]
R. Sielemann, H. Metzner, R. Butt, S. Klaumünzer, H. Haas, and G. Vogl, Phys. Rev. B 25 (1982), 5555.
DOI: 10.1103/physrevb.25.5555
Google Scholar
[6]
P. Blood, J.W. Orton: The electrical Characterization of Semiconductors: Majority Carriers and Electron States (Academic Press, London, 1992) p.407.
Google Scholar
[7]
T. Dalibor, phys. stat. sol. (a) 162 (1997), 199.
Google Scholar