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High Energy Resolution Detectors Based on 4H-SiC

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Abstract:

The spectrometric characteristics of the detectors based on 4H-SiC using 4.8-7.7 MeV a-particles were determined. The Cr Schottky barriers with areas of 1×10-2 cm2 were performed^by vacuum thermal evaporation on 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD) with thickness 26 and 50 µm. The concentrations of the uncompensated donors into CVD epitaxial layers were (6-10) ×1014 cm-3, that allowed to develop a detector depletion region up to 30 µm using reverse bias of 400 V. The energy resolution less than 20 keV (0.34%) for lines of 5.0- 5.5 MeV was achieved that is twice as large of the resolution of high-precision Si-based detectors prepared on specialized technology. The maximum signal amplitude of 4H-SiC - detectors corresponding to the average electron-hole pair generation energy was found to be 7.70 eV.

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Silicon Carbide and Related Materials 2004 View Preview

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

1029-1032

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.1029

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Online since:

May 2005

Authors:

Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov, Nikita B. Strokan, G. Onushkin, Andrey O. Konstantinov, Anders Hallén, Andrej Yu. Kuznetsov

Keywords:

Charge Collection, Detector, Energy Resolution, Irradiation, Isotope, Silicon Carbide (SiC), α-particles

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] Physical Processes in exposed Semiconductors, Ed. By L.S. Smirnov (Nauka, Novosibirsk, 1977).

Google Scholar

[2] V.A. Tikhomirova, O.P. Fedoseeva, G.F. Kholuyanov: Atomic Energy Vol. 34, (1973), p.122.

Google Scholar

[3] A.M. Ivanov, E.V. Kalinina, A.O. Konstantinov, G.A. Onushkin, N.B. Strokan, G.F. Kholujanov, A. Hallén: Technical Physics Letters Vol. 30, (2004), p.575.

DOI: 10.1134/1.1783406

Google Scholar

[4] M. Ikeda and H. Matsunami: Phys. Status Solidi A 58, (1980), p.657.

Google Scholar

[5] A. Suzuki, H. Matsunami, and T. Tanak: J. Electrochem. Soc. Vol. 124, (1977), p.241.

Google Scholar

[6] G. Bertuccio, R Casiraghi: IEEE Trans. Nucl. Science Vol. 50, (2003), p.175.

Google Scholar

[7] A.M. Ivanov, N.B. Strokan: Thechnical Physics Vol. 70, (2000), p.139.

Google Scholar