Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers

Hugues Mank; Catherine Moisson; Daniel Turover; Mark E. Twigg; Stephen E. Saddow

doi:10.4028/www.scientific.net/MSF.483-485.197

Paper Titles

Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate
p.181

Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method
p.185

Planar Defects, Voids and their Relationship in 3C-SiC Layers
p.189

Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate
p.193

Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers
p.197

Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates
p.201

Challenge to 200 mm 3C-SiC Wafers Using SOI
p.205

Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates
p.209

Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
p.213

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si...

Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers

Abstract:

In this work, we have investigated the 3C-SiC re-growth on planarized 3C-SiC epitaxial layers, grown on (001)Si, after the application of a chemical mechanical polishing (CMP) process. A specific polishing process was developed for 3C-SiC to achieve a flat, high-quality surface. The interface between the deposited 3C-SiC and the polished 3C-SiC on Si film was studied by TEM characterization to determine if defects appear at this interface. It was observed that no additional defects were nucleated at the interface. The resulting re-grown film roughness, as a function of film thickness, was studied and is reported along with recommendations for future work.