Paper Titles
Planar Defects, Voids and their Relationship in 3C-SiC Layers
p.189
Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate
p.193
Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers
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Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates
p.201
Challenge to 200 mm 3C-SiC Wafers Using SOI
p.205
Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates
p.209
Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
p.213
A Thermal Model for Flash Lamp Annealing of 3C-SiC/Si Multi-Layer Systems (i-FLASiC)
p.217
Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate
p.221

Challenge to 200 mm 3C-SiC Wafers Using SOI

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Abstract:

200 mm wafer with 3C-SiC/SiO2/Si structure has been fabricated using 200 mm siliconon- insulator (SOI) wafer. A top Si layer of 200 mm SOI wafer was thinned down to approximately 5 nm by sacrificial oxidization, and the ultrathin top Si layer was metamorphosed into a 3C-SiC seed layer using a carbonization process. Afterward, an epitaxial SiC layer was grown on the SiC seed layer with ultra-high vacuum chemical vapor deposition. A cross-section transmission electron microscope indicated that a 3C-SiC seed layer was formed directly on the buried oxide layer of 200 mm wafer. The epitaxial SiC layer with an average thickness of approximately 100 nm on the seed was recognized over the entire region of the wafer, although thickness uniformity of the epitaxial SiC layer was not as good as that of SiC seed layer. A transmission electron diffraction image of the epitaxial SiC layer showed a monocrystalline 3C-SiC(100) layer with good crystallinity. These results indicate that our method enables to realize 200 mm SiC wafers.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

205-208

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.205

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Online since:

May 2005

Authors:

Motoi Nakao, Hirofumi Iikawa, Katsutoshi Izumi, Takashi Yokoyama, Sumio Kobayashi

Keywords:

200 mm Wafer, 3C-SiC, Carbonization, Seed Layer, Silicon Carbide (SiC), SOI, UHV-CVD

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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