Paper Titles
Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers
p.197
Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates
p.201
Challenge to 200 mm 3C-SiC Wafers Using SOI
p.205
Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates
p.209
Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
p.213
A Thermal Model for Flash Lamp Annealing of 3C-SiC/Si Multi-Layer Systems (i-FLASiC)
p.217
Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate
p.221
Large Area DPB Free (111) β-SiC Thick Layer Grown on (0001) α-SiC Nominal Surfaces by the CF-PVT Method
p.225
Comparative Evaluation of Free-Standing 3C-SiC Crystals
p.229

Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification

Article Preview

Abstract:

The influence of the different additions to the melt on the nucleation behavior during short time flash lamp processing was investigated. It was observed that germanium and carbon additions to the silicone melt led to an increase of the mass transport to the growing surface and to an increase of the nuclei size. In the case of germanium additions to the silicon melt an incorporation of germanium in the silicon substrate was observed.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2004 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

213-216

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.213

Citation:

Cite this paper

Online since:

May 2005

Authors:

Joerg Pezoldt, Efstathios K. Polychroniadis, Thomas Stauden, Gernot Ecke, Thierry Chassagne, P. Vennéguès, André Leycuras, D. Panknin, J. Stoemenos, Wolfgang Skorupa

Keywords:

3C-SiC, AES, Heteroepitaxy, Liquid Phase Epitaxy (LPE), Nucleation, TEM

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] H. Jagodzinski: Neues Jahrb. Miner. Monatsh. Vol. 3 (1954), p.49.

Google Scholar

[2] J. Pezoldt: Mater. Sci. Eng. Vol. B29 (1995), p.99.

Google Scholar

[3] D. Panknin, J. Stoemenos, M. Eickhoff, V. Heera, N. Vourouzis, G. Krötz and W. Skorupa: Mater. Sci. Forum Vol. 353-356 (2001), p.151.

DOI: 10.4028/www.scientific.net/msf.353-356.151

Google Scholar

[4] W. Skorupa, D. Panknin, W. Anwand, M. Voelskow, G. Ferro, Y. Monteil, A. Leycuras, J. Pezoldt, R. McMahon, M. Smith, J. Camassel, J. Stoemenos, E. Polychroniadis, P. Godignon, N. Mestres, D. Turover, S. Rushworth and A. Friedberger: Mater. Sci. Forum Vol. 457-460 (2004).

DOI: 10.4028/www.scientific.net/msf.457-460.175

Google Scholar

[5] E. Polychroniadis, J. Stoemenos, G. Ferro, Y. Monteil, D. Panknin and W. Skorupa: Mater. Sci. Forum Vol. 457-460 (2004), p.351.

DOI: 10.4028/www.scientific.net/msf.457-460.351

Google Scholar

[6] H.J. Osten: Thin Solid Films Vol. 367 (2000), p.101.

Google Scholar

[7] T. Wöhner, Th. Stauden, J.A. Schaefer and J. Pezoldt: Mater. Sci. Forum Vol. 338-342 (2000), p.281.

Google Scholar

[8] P. Weih, V. Cimalla, Ch. Förster, J. Pezoldt, Th. Stauden, L. Spieß, H. Romanus, M. Hermann, M. Eickhoff, P. Masri and O. Ambacher: Mater. Sci. Forum Vol. 433-436 (2003).

DOI: 10.4028/www.scientific.net/msf.433-436.233

Google Scholar