Paper Titles
Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates
p.209
Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
p.213
A Thermal Model for Flash Lamp Annealing of 3C-SiC/Si Multi-Layer Systems (i-FLASiC)
p.217
Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate
p.221
Large Area DPB Free (111) β-SiC Thick Layer Grown on (0001) α-SiC Nominal Surfaces by the CF-PVT Method
p.225
Comparative Evaluation of Free-Standing 3C-SiC Crystals
p.229
Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing
p.233
Microfabrication of Si Column Covered with SiC Film for Electron Emitter
p.237
Formation of Ferromagnetic SiC:Mn Phases
p.241

Large Area DPB Free (111) β-SiC Thick Layer Grown on (0001) α-SiC Nominal Surfaces by the CF-PVT Method

Article Preview

Abstract:

Thick (111) oriented β-SiC layers have been grown by hetero-epitaxy on a (0001) a-SiC substrate with the Continuous Feed-Physical Vapour Transport (CF-PVT) method. The growth rate was 68 µm/h at a pressure of 2 torr and a temperature of 1950°C. The nucleation step of the β-SiC layer during the heating up of the process was studied in order to manage first the a to b heteropolytypic transition and second the selection of the b-SiC orientation. With a adapted seeding stage, we grew a 0.4mm thick layer almost free of Double Positioning Boundaries on a 30mm diameter sample. First observations of the layer by cross-polarised optical Microscopy are presented both in planar view and in cross section geometry.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2004 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

225-228

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.225

Citation:

Cite this paper

Online since:

May 2005

Authors:

Didier Chaussende, Laurence Latu-Romain, Laurent Auvray, M. Ucar, Michel Pons, Roland Madar

Keywords:

3C-SiC, Bulk, Crystal Growth, Nucleation, PVT

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] S.N. Gorin, L.M. Ivanova, Phys. Stat. Sol. (b) 202 (1997) p.221.

Google Scholar

[2] H. Nagasawa, K. Yagi, Phys. Stat. Sol. (b) 202 (1997) p.335.

Google Scholar

[3] H.S. Kong, B.L. Liang, J.T. Glass, G.A. Rozgonyi, K.L. More, Journal of Applied Physics 63(8) (1988) p.2645.

Google Scholar

[4] D. Chaussende, F. Baillet, L. Charpentier, E. Pernot, M. Pons, and R. Madar, Journal of the Electrochemical Society 150 (2003) p. G653.

DOI: 10.1149/1.1606689

Google Scholar

[5] D. Chaussende, P. Chaudouet, L. Auvray, R. Madar, Materials Science Forum 457-460 (2004) p.387.

Google Scholar

[6] L. Latu-Romain, D. Chaussende, P. Chaudouët, F. Robaut, G. Berthomé, M. Pons and R. Madar, Proceeding of the 14th International Conference on Crystal Growth (2004) August 9-13, Grenoble.

DOI: 10.1016/j.jcrysgro.2004.11.005

Google Scholar

[7] H.N. Jayatirtha, M.G. Spencer, C. Taylor, W. Greg, Journal of Crystal Growth 174 (1997) p.662.

Google Scholar