Paper Titles
Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
p.213
A Thermal Model for Flash Lamp Annealing of 3C-SiC/Si Multi-Layer Systems (i-FLASiC)
p.217
Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate
p.221
Large Area DPB Free (111) β-SiC Thick Layer Grown on (0001) α-SiC Nominal Surfaces by the CF-PVT Method
p.225
Comparative Evaluation of Free-Standing 3C-SiC Crystals
p.229
Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing
p.233
Microfabrication of Si Column Covered with SiC Film for Electron Emitter
p.237
Formation of Ferromagnetic SiC:Mn Phases
p.241
Two-Dimensional Model of Conjugate Heat and Mass Transport in the Isothermal Chemical Vapour Infiltration of 3D-Preform by SiC Matrix
p.245

Comparative Evaluation of Free-Standing 3C-SiC Crystals

Article Preview

Abstract:

The evolution of defects versus thickness has been investigated in three different freestanding 3C-SiC samples, using TEM (Transmission Electron Microscopy) and LTPL (Low Temperature Photo-Luminescence) spectroscopy. In all samples, the stacking fault density reduces rapidly within the first 20 µm of the growth. Then it remains constant, at about 5x103 cm-1 up to the end. This behavior is attributed to the easy generation of stacking faults, even under a very low thermal stress, as in-situ experiments reveal. On the opposite the elimination of inversion domains, by bending boundaries during the growth, is found to be sample dependant. This is in good agreement with LTPL results.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2004 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

229-232

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.229

Citation:

Cite this paper

Online since:

May 2005

Authors:

Efstathios K. Polychroniadis, Carole Balloud, Sandrine Juillaguet, Gabriel Ferro, Yves Monteil, Jean Camassel, J. Stoemenos

Keywords:

Free-Standing 3C-SiC, Inversion Domain Boundaries, Residual Doping, Structural Property

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] http/www. hoya. co. jp/eng/news.

Google Scholar

[2] H. Nagasawa, K. Yagi, T. Kawahara, N. Hatta, G. Pensl, W.J. Choyke, T. Yamada, K.M. Itoh and A. Schöner in Silicon carbide : recent major advances, Springer Series in Material Science Vol. 79 (2004), p.207.

DOI: 10.1007/978-3-642-18870-1_9

Google Scholar

[3] E. Polychroniadis, M. Syväjärvi, R. Yakimova and J. Stoemenos, J. Crys. Growth 263 (2004) 68.

Google Scholar

[4] G. Ferro, C. Balloud, S. Juillaguet, P. Vicente, J. Camassel and Y. Monteil, Materials Science Forum Vols 433-436 (2003) 115.

DOI: 10.4028/www.scientific.net/msf.433-436.115

Google Scholar

[5] H. Nagasawa, K. Yagi, T. Kawahara, J. Crystal Growth, 237 (2002) 1244.

Google Scholar

[6] N. Hatta, K. Yagi, T. Kawahara and H. Nagasawa, Proc. 4th European Conference on SiC and Related Materials, Linköping, Sweden Sep. 1-5 (2002) paper WeP3-08.

Google Scholar

[7] U. Lindefelt, H. Iwata, S. Öberg, P.R. Briddon, Phys. Rev. B67 (2003) 155204.

Google Scholar