Paper Titles
A Thermal Model for Flash Lamp Annealing of 3C-SiC/Si Multi-Layer Systems (i-FLASiC)
p.217
Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate
p.221
Large Area DPB Free (111) β-SiC Thick Layer Grown on (0001) α-SiC Nominal Surfaces by the CF-PVT Method
p.225
Comparative Evaluation of Free-Standing 3C-SiC Crystals
p.229
Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing
p.233
Microfabrication of Si Column Covered with SiC Film for Electron Emitter
p.237
Formation of Ferromagnetic SiC:Mn Phases
p.241
Two-Dimensional Model of Conjugate Heat and Mass Transport in the Isothermal Chemical Vapour Infiltration of 3D-Preform by SiC Matrix
p.245
A Short Synopsis of the Current Status of Porous SiC and GaN
p.251

Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing

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Abstract:

An approach for the defect density reduction in 3C-SiC epitaxially grown on Si is to improve the quality of the carbonized layer during the early stage of growth. For this reason the conventional carbonization process was replaced by a slower and nearer equilibrium carbonization method. Carbon is introduced by implantation into oxide of an oxidized Si substrate, near the SiO2/Si interface, and then it is transferred to the Si surface by annealing. Good quality 3C-SiC grains are formed embedded into the Si substrate, which are absolutely flat at the SiO2/Si interface. Another advantage of the new carbonization process is the elimination of the cavities due to the suppression of Si out-diffusion.

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Silicon Carbide and Related Materials 2004 View Preview

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

233-236

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.233

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Online since:

May 2005

Authors:

M. Voelskow, D. Panknin, Efstathios K. Polychroniadis, Gabriel Ferro, Philippe Godignon, Narcis Mestres, Wolfgang Skorupa, Yves Monteil, J. Stoemenos

Keywords:

Carbon Implantation, Carbonization Process

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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