Paper Titles
Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate
p.221
Large Area DPB Free (111) β-SiC Thick Layer Grown on (0001) α-SiC Nominal Surfaces by the CF-PVT Method
p.225
Comparative Evaluation of Free-Standing 3C-SiC Crystals
p.229
Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing
p.233
Microfabrication of Si Column Covered with SiC Film for Electron Emitter
p.237
Formation of Ferromagnetic SiC:Mn Phases
p.241
Two-Dimensional Model of Conjugate Heat and Mass Transport in the Isothermal Chemical Vapour Infiltration of 3D-Preform by SiC Matrix
p.245
A Short Synopsis of the Current Status of Porous SiC and GaN
p.251
Preparation of Porous 4H-SiC by Surface Anodization
p.257

Microfabrication of Si Column Covered with SiC Film for Electron Emitter

Article Preview

Abstract:

The selective growth of Si column was carried out by depositing Au on patterned Si (111) substrate as a solvent in chemical vapor transport method by using halides (HCl). The Si column was produced by VLS mechanism. The column was covered with SiC by conventional CVD process using HMDS ( Hexamethyldisilane ). Carbon Nano Tube ( CNT ) was deposited on Si column covered with SiC by DC assisted µ-wave plasma CVD.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2004 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

237-240

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.237

Citation:

Cite this paper

Online since:

May 2005

Authors:

T. Nakata, Y. Ohshiro, A. Shoji, Yoichi Okui, Satoru Ohshima, Yoshihiko Hayashi, Shigehiro Nishino

Keywords:

Carbon Nanotube (CN), Chemical Vapor Deposition (CVD), Current-Voltage Characteristic, Si Column, VLS Mechanism, X-Ray

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] R.N. Minh, L.T. Tuyen, T. Ono, H. Miyashita, Y. Suzuki, H. Mimura and M. Esashi, J. vac Sci. Technol. Jul / Aug (2003) 1705.

Google Scholar

[2] F.A. Taft, J. Electrochem. Soc. 118(1971)1535.

Google Scholar

[3] P.D. Braun and W. Kasak, J. Crystal Growth, 45(1978)118.

Google Scholar

[4] R.S. Wagner W.C. Ellis K.A. Jackson and S.M. Arnold, J. Appl. Phys. 35(1964)2993.

Google Scholar

[5] R.S. Wagner W.C. Ellis, Trans. Metall. Soc. AIME, 233(1965).

Google Scholar