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Optical Spectroscopy as a Tool for Observation of Porous SiC Graphitization

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Abstract:

We have studied effects of thermal treatment in vacuum and wet oxidation on the optical transmission of SiC samples with porous layer on the Si face in the visible and near infrared spectral range. An analysis of changes in the absorption coefficient shows that the process of graphitization in vacuum begins at a temperature below 700°C and can be observed at wet oxidation at 1000°C.

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Silicon Carbide and Related Materials 2004 View Preview

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

261-264

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.261

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Online since:

May 2005

Authors:

V.B. Shuman, N.S. Savkina

Keywords:

Graphitization, Optical Spectroscopy, Oxidation, Porous SiC, Vacuum Thermal Treatment

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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