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Preparation of Porous 4H-SiC by Surface Anodization
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Optical Spectroscopy as a Tool for Observation of Porous SiC Graphitization
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X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates
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X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates

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Abstract:

The methods of X-ray topography and diffractometry have been applied to characterize the structure of epilayers grown on porous layers. Two geometrical configurations of defects determined to be stacking faults (SF) were revealed: i) with the images of triangular shape with the edge size 560 µm along the <10-10> directions; ii) linear shape along the [11-20] direction. The sources of SFs are located within the epilayer and start from the epilayer / porous layer interface. We propose that the source of SFs is connected with graphitization of porous layer at the temperature of epitaxy.

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Silicon Carbide and Related Materials 2004 View Preview

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

265-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.265

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Online since:

May 2005

Authors:

I.L. Shulpina, N.S. Savkina, V.B. Shuman, V.V. Ratnikov, Mikael Syväjärvi, Rositza Yakimova

Keywords:

Bragg Diffraction, Porous SiC, Section Topography, Stacking Fault

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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