A Short Synopsis of the Current Status of Porous SiC and GaN
p.251
p.251
Preparation of Porous 4H-SiC by Surface Anodization
p.257
p.257
Optical Spectroscopy as a Tool for Observation of Porous SiC Graphitization
p.261
p.261
X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates
p.265
p.265
On Current Limitations in Porous SiC Applications
p.269
p.269
Interface Defects in n-Type 3C-SiC/SiO2: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals
p.273
p.273
Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC
p.277
p.277
Development of a KOH Defect Etching Furnace with Absolute In-Situ Temperature Measurement Capability
p.283
p.283
Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies
p.287
p.287
On Current Limitations in Porous SiC Applications
Abstract:
Thermal stability of porous SiC (PSC) with nano-, micro- and double-layer porous structure is assessed through annealing the material at T=900–1700 0C in vacuum and Ar. Changes in composition of PSC under thermal treatment are correlated with porous structure modification. Limitations in PSC technology and applications due to compositional and structure evolution at high temperatures are discussed.
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Periodical:
Materials Science Forum (Volumes 483-485)
Pages:
269-272
Citation:
Online since:
May 2005
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© 2005 Trans Tech Publications Ltd. All Rights Reserved
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