Paper Titles
Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
p.323
Investigation of Stacking Fault Formation in Hydrogen Bombarded 4H-SiC
p.327
Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix
p.331
Specific Aspects of Type II Heteropolytype Stacking Faults in SiC
p.335
Optical Characterization of Deep Level Defects in SiC
p.341
Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide
p.347
Hyperfine Interaction of Nitrogen Donor in 4H-SiC Studied by Pulsed-ENDOR
p.351
Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS
p.355
Electronic Levels Induced by Irradiation in 4H-Silicon Carbide
p.359

Optical Characterization of Deep Level Defects in SiC

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Abstract:

Deep levels in 4H- and 6H-SiC are characterized by FTIR spectroscopy. Vanadium, chromium and the silicon vacancy related center are listed together with the unidentified defects with emission and absorption in the near IR region. We suggest the UD-1, UD-3 and I-1 to be impurity related while the UD-2 and UD-4 to be intrinsic defects based on annealing behavior and the possibility to create the defect with irradiation. We have also tentatively assigned a new defect center around 1.0 eV to the carbon vacancy-antisite pair instead of the earlier assignment to the UD- 2 defect in 4H-SiC. We have shown that to get more information about the SiC samples a combination of absorption and luminescence techniques are very useful. Further, the use of below bandgap selective excitation is necessary to obtain more information about the defects present in the sample. FTIR absorption and luminescence measurements are useful tools to characterize deep levels important for both semi-insulating material as well as low doped conducting material where the free carrier lifetime is limited by deep levels.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

341-346

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.341

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Online since:

May 2005

Authors:

Björn Magnusson, Erik Janzén

Keywords:

Absorption, Deep Level, FT-IR, Photoluminescence (PL)

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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