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Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC
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Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
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Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes

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Abstract:

The effects of the Si/H2 ratio on the growth of the epitaxial layer and on the epitaxial defects was studied in detail. A large increase of the growth rate has been observed with the increase of the silicon flux in the CVD reactor. Close to a Si/H2 ratio of 0.05 % silicon nucleation in the gas phase occurs producing a great amount of silicon particles that precipitate on the wafers. The epitaxial layers grown with a Si/H2 ratio of 0.03% show a low defect density and a low leakage current of the Schottky diodes realized on these wafers. For these diodes the DLTS spectra show thepresence of several peaks at 0.14, 0.75, 1.36 and 1.43 eV. For epitaxial layers grown with higher values of the Si/H2 ratio and then with an higher growth rate, the leakage current of the Schottky diodes increases considerably.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

429-432

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.429

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Online since:

May 2005

Authors:

Francesco La Via, Fabrizio Roccaforte, Salvatore Di Franco, Alfonso Ruggiero, L. Neri, Ricardo Reitano, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, Gian Luca Valente, Danilo Crippa

Keywords:

DLTS, Epitaxial Growth, KOH Etch, Schottky Diode

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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