Paper Titles
Electron Irradiation Induced Vacancy Defects Detected by Positron Annihilation in 6H-SiC
p.473
The VSiCSi(SiCCSi) Complex in Electron-Irradiated 6H-SiC
p.477
The Role of Nitrogen in the Annealing of Vacancies in 4H-SiC
p.481
Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers
p.485
High-Temperature Stable Multi-Defect Clusters in Neutron Irradiated Silicon Carbide: Electron Paramagnetic Resonance Study
p.489
Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC
p.493
M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate
p.497
Ab Initio Calculation of Shallow Defects: Results for P-Related Donors in SiC
p.501
Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition
p.507

High-Temperature Stable Multi-Defect Clusters in Neutron Irradiated Silicon Carbide: Electron Paramagnetic Resonance Study

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Abstract:

The high-temperature stable defect complexes in 6H-SiC crystals created by heavy neutron irradiation and following high-temperature annealing have been discovered by EPR. After annealing at 1500°C at least five new axially symmetric centers with the electron spin S = 1/2 and S = 1 were shown to arise in 6H-SiC crystals. The striking feature of all discovered centers is a strong hyperfine interaction with a great number (up to twelve) of equivalent host Si (C) atoms. Two models, a four-vacancy complex VSi-3VC, and a split-interstitial antisite (C2)Si or a pair of two antisites (C2)Si-SiC are discussed. There is a good probability that some of new centers could be related to the famous D1 and DII centers. After annealing at 2000°C the dc1-dc4 centers disappeared and a new triplet center labeled as N-V in the form of a silicon vacancy and a nitrogen atom in neighboring carbon substitutional position has been observed. The parameters of this center are similar to that for well-known N-V center in diamond.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

489-492

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.489

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Online since:

May 2005

Authors:

P.G. Baranov, Ivan V. Ilyin, Marina V. Muzafarova, E.N. Mokhov, S.G. Konnikov

Keywords:

Cluster, EPR, Silicon Carbide (SiC), Vacancy

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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