Paper Titles
The Role of Nitrogen in the Annealing of Vacancies in 4H-SiC
p.481
Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers
p.485
High-Temperature Stable Multi-Defect Clusters in Neutron Irradiated Silicon Carbide: Electron Paramagnetic Resonance Study
p.489
Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC
p.493
M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate
p.497
Ab Initio Calculation of Shallow Defects: Results for P-Related Donors in SiC
p.501
Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition
p.507
Effective-Mass Theory of Shallow Donors in 4H-SiC
p.511
Electron Paramagnetic Resonance of Shallow Phosphorous Centers in 4H- and 6H-SiC
p.515

M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

497-500

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.497

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Online since:

May 2005

Authors:

H. K.-Nielsen, Anders Hallén, D.M. Martin, Bengt Gunnar Svensson

Keywords:

4H-SiC, Bistable, DLTS, Emission Rate, Ion Implantation, Metastable

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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