Paper Titles
High-Temperature Stable Multi-Defect Clusters in Neutron Irradiated Silicon Carbide: Electron Paramagnetic Resonance Study
p.489
Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC
p.493
M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate
p.497
Ab Initio Calculation of Shallow Defects: Results for P-Related Donors in SiC
p.501
Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition
p.507
Effective-Mass Theory of Shallow Donors in 4H-SiC
p.511
Electron Paramagnetic Resonance of Shallow Phosphorous Centers in 4H- and 6H-SiC
p.515
Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects
p.519
Ab-Initio Study of Dopant Interstitials in 4H-SiC
p.523

Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition

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Abstract:

The conclusion which is drawn from the EPR line broadening and narrowing of the N shallow donor in an isotope enriched and non-enriched 4H-SiC and 6H-SiC crystals along with previous ENDOR results shows that the spin-density distribution over the C and Si nuclei differs between the 4H-SiC and 6H-SiC polytypes. The main part of the spin density in 4H-SiC is located on the Si sublattice. In contrast, in 6H-SiC the main part of the spin density is located on the C sublattice. An explanation for the difference in the electronic wave function of the N donor in 4HSiC and 6H-SiC can be found in the large difference in the band structure of two polytypes and in the position of the minima in the Brillouin zone.

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Silicon Carbide and Related Materials 2004 View Preview

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

507-510

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.507

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Online since:

May 2005

Authors:

Marina V. Muzafarova, Ivan V. Ilyin, E.N. Mokhov, P.G. Baranov, B.Ya. Ber, A.N. Ionov, P.S. Kop'ev, M.A. Kaliteevskii, O.N. Godisov, A.K. Kaliteevskii

Keywords:

Changed Isotopic Composition, EPR, Shallow Acceptors, Shallow Donors, Silicon Carbide (SiC)

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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