Paper Titles
Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC
p.493
M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate
p.497
Ab Initio Calculation of Shallow Defects: Results for P-Related Donors in SiC
p.501
Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition
p.507
Effective-Mass Theory of Shallow Donors in 4H-SiC
p.511
Electron Paramagnetic Resonance of Shallow Phosphorous Centers in 4H- and 6H-SiC
p.515
Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects
p.519
Ab-Initio Study of Dopant Interstitials in 4H-SiC
p.523
Kinetic Aspects of the Interstitial-Mediated Boron Diffusion in SiC
p.527

Effective-Mass Theory of Shallow Donors in 4H-SiC

Article Preview

Abstract:

The one-valley effective-mass approximation is developed for the case of uniaxial crystals with indirect bandgap and applied to the donor states in 4H-SiC. Good agreement is found between the theory and experiments providing data on the electronic states of the shallowest nitrogen donor in 4H-SiC. The ionization energy of this donor is deduced to be 61.35 ± 0.2 meV.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2004 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

511-514

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.511

Citation:

Cite this paper

Online since:

May 2005

Authors:

Ivan G. Ivanov, A. Stelmach, Mats Kleverman, Erik Janzén

Keywords:

Effective-Mass Theory, Nitrogen Donor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] W. Kohn: Solid State Physics Vol. 5 (1957), p.257, see also the references therein.

Google Scholar

[2] R.A. Faulkner: Phys. Rev. Vol. 184 (1969), p.713.

Google Scholar

[3] D. Volm, B.K. Meyer, D.M. Hofmann, W.M. Chen, N.T. Son, C. Persson, U. Lindefelt, O. Kordina, E. Sörman, A.O. Konstantinov, B. Monemar and E. Janzén3399: Phys. Rev. B Vol. 53 (1996), p.15409.

DOI: 10.1103/physrevb.53.15409

Google Scholar

[4] I.G. Ivanov, B. Magnusson and E. Janzén: Phys. Rev. B Vol. 67 (2003), p.165211.

Google Scholar

[5] C.Q. Chen, J. Zeman, F. Engelbrecht, C. Peppermüller, R. Helbig, Z.H. Chen and G. Martinez: J. Appl. Phys. Vol. 87 (2000), p.3800.

Google Scholar

[6] C.Q. Chen, R. Helbig, F. Engelbrecht and J. Zeman: Appl. Phys. A Vol. 72 (2001), p.717.

Google Scholar

[7] A. Thilderqvist, M. Kleverman, G. Grossmann and H. Grimmeiss: Phys. Rev. B Vol. 49 (1994) , p.14270.

Google Scholar

[8] I.G. Ivanov, B. Magnusson and E. Janzén: Phys. Rev. B Vol. 67 (2003), p.165212.

Google Scholar

[9] G.F. Koster, J.O. Dimmock, R.G. Wheeler and H. Statz: Properties of the Thirty-Two Point Groups (MIT Press, Cambridge, 1963).

Google Scholar