High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N2O and NO Ambient

Ryouji Kosugi; Kenji Fukuda; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.483-485.669

Paper Titles

Study of Carbon in Thermal Oxide Formed on 4H-SiC by XPS
p.653

The Role of Formation and Dissolution of C Clusters on the Oxygen Incorporation during Dry Thermal Oxidation of 6H-SiC
p.657

Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
p.661

Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC
p.665

High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N₂O and NO Ambient
p.669

4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N₂O
p.673

High-Reliability ONO Gate Dielectric for Power MOSFETs
p.677

An In-Situ Post Growth Annealing Process for the Improvement of 4H-SiC/SiO₂ MOS Interface Prepared by CVD Using TEOS, and its Characteristic Study
p.681

High Temperature NO Annealing of Deposited SiO₂ and SiON Films on N-Type 4H-SiC
p.685

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485High Temperature Rapid Thermal Oxidation and...

High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N₂O and NO Ambient

Abstract:

A high temperature rapid thermal processing (HT-RTP) above 1400oC was investigated for use in the gate oxide formation of 4H-SiC by a cold-wall oxidation furnace. The gate oxide film of ~50nm can be formed for several minutes in the oxidizing atmospheres such as N2O and O2, where the oxidation rates were 8-10nm/min. After the initial oxide formation, the HT-RTPs in various ambient gases were conducted, and the dependences of their MOS interface properties on the gases were evaluated by a capacitance-voltage (CV) measurement. Based on the results, the process sequence of gate oxidation was determined as follows; the initial oxide was formed by the HT-RTO (oxidation) in N2O or in O2 with subsequent post annealing in Ar ambient, and then the HT-RTN (nitridation) in NO was conducted. The total process time becomes 20-50min. The interface trap density (Dit) of fabricated MOS capacitor shows 3-5x1011cm-2eV-1 at Ec-E~0.2eV. The field-effect channel mobility of fabricated 4H-SiC lateral MOSFETs was ~30cm2/Vs.