Paper Titles
Reduction of Fluoride Species and Surface Roughness by H2 Gas Addition in SiC Dry Etching
p.757
Structure and Morphology of 4H-SiC Wafer Surfaces after H2-Etching
p.761
Reactive Ion Etching Induced Surface Damage of Silicon Carbide
p.765
The Reactive Neutral Beam Etching of SiC and its Application in p-n Junction Periphery Protection
p.769
Forward-Bias Degradation in 4H-SiC p+nn+ Diodes: Influence of the Mesa Etching
p.773
Trench Formation on Ion Implanted SiC Surfaces after Thermal Oxidation
p.777
Metal Bonding in SiC Based Substrates
p.781
SiC Power Device Packaging Technologies for 300 to 350°C Applications
p.785
Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET Fabrication
p.793

Forward-Bias Degradation in 4H-SiC p+nn+ Diodes: Influence of the Mesa Etching

Article Preview

Abstract:

The defects were investigated in p+nn+ 4H-SiC diodes by observing the forward-biasinduced light emission through the substrate. The spatial intensity distribution, the temporal evolution and the spectral content of the electroluminescence (EL) signal have been measured in order to detect, identify and understand the defect formation during forward-bias application. It was found that, exept from the dislocations inside the epilayers, mesa etching is a main cause for the formation of extended defects. To our knowledge, for the first time, reduction of mesa-etchinginduced defects is shown in this investigation.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2004 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

773-776

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.773

Citation:

Cite this paper

Online since:

May 2005

Authors:

Nicolas Camara, Aurelie Thuaire, Edwige Bano, Konstantinos Zekentes

Keywords:

Diode, Electroluminescence, Etching, RIE, Stacking Fault

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] J.P. Bergman, H. Lendenmann, P.A. Nilsson, U. Lindefelt and P. Skytt: Materials Science Forum Vols. 353-356, pp.299-302 (2001).

DOI: 10.4028/www.scientific.net/msf.353-356.299

Google Scholar

[2] H. Lendenmann, J.P. Bergman, F. Dahlquist and C. Hallin: Materials Science Forum Vols 433- 436, pp.901-906, (2003).

DOI: 10.4028/www.scientific.net/msf.433-436.901

Google Scholar

[3] P. Persson, L. Hultman, H. Jacobson, J. P. Bergman, and E. Janzen: Appl. Phys. Lett 80 (24), p.4852, (2002).

Google Scholar

[4] H. Jacobson, J.P. Bergman, C. Hallin, T. Tuomi and E. Janzen.: Materials Science Forum Vols 433-436, pp.913-916, (2003).

Google Scholar

[5] P. Persson, L. Hultman, M.S. Janson, E. Janzen and R. Yakimova: J. Appl. Phys., 93 (11), p.9395, (2003).

Google Scholar

[6] K.V. Vassilevski, A.V. Zorenko: Materials Science Forum Vols. 389-393 (2002).

Google Scholar

[7] N. Camara, K. Zekentes: Sol. St. Electron., 46 (11), 1959 (2002).

Google Scholar

[8] A. Galeckas, J. Linnros, and B. Breitholtz: J. Appl. Phys., 90 (2), pp.982-984, (2001).

Google Scholar

[9] J.J. Sumakeris, M. Das, et al.: Materials Science Forum Vols. 457-460, pp.1113-1116, (2004) a) b) Fig. 6 Defect propagation after a 10kA. cm -2 stress for several seconds, a) with a 500nm green filter, b) with a 700nm red filter.

Google Scholar