Paper Titles
Preface
Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes
p.3
Committees
p.4
Preface
p.6
Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport
p.9
Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary Solution
p.13
Growth of 2 Inches 6H-SiC Single Crystals by Sublimation Method: The Comparison of α- and ß-SiC Powders
p.17
A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT
p.21
Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions
p.25

Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport

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Abstract:

Semi-insulating 6H SiC substrates, 2”, 3” and 100mm in diameter, and n+ 4H SiC substrates, 2” and 3” in diameter, are grown at II-VI using the Advanced Physical Vapor Transport (APVT) technique [1]. The process utilizes high-purity SiC source and employs special measures aimed at the reduction of background contamination. Semi-insulating properties are achieved by precise vanadium compensation, which yields substrates with stable and uniform electrical resistivity reaching ~ 1011 Ω-cm and higher. Conductive n+ 4H SiC crystals with the spatially uniform resistivity of 0.02 W-cm are grown using nitrogen doping. Crystal quality of the substrates, their electrical properties and low temperature photoluminescence are discussed.

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Silicon Carbide and Related Materials 2004 View Preview

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

9-12

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.9

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Online since:

May 2005

Authors:

Thomas Anderson, Donovan L. Barrett, J. Chen, Ejiro Emorhokpor, A. Gupta, R.H. Hopkins, Andrew E. Souzis, C.D. Tanner, Murugesu Yoganathan, Ilya Zwieback, Wolfgang J. Choyke, Robert P. Devaty, Fei Yan

Keywords:

Point Defect, Resistivity, Semi-insulating (SI), Silicon Carbide (SiC), Sublimation Growth

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] V. Balakrishna et al; US Patent No. 6. 056, 820 (2000). Licensed to II-VI.

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[2] D. Barrett et al; US Paent No. 5, 611, 955 (1997). Licensed to II-VI.

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[3] H. M. Hobgood, et al; Appl. Phys. Lett. 66 (1995), p.1364.

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[4] W. J. Choyke, in The Physics and Chemistry of Carbides, Nitrides, and BoridesNATO, ASI Series E: Appl. Sci. 185, ed. R. Freer (Kluwer, Dordrecht, 1990) p.863.

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