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Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)
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Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)
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Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability

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Abstract:

Other than open micropipes (MP), overgrown micropipes do not necessarily lead to a^significantly reduced blocking capability of the affected SiC device. However they can lead to a degradation of the device during operation. In this paper the physical structure of overgrown micropipes will be revealed and their contribution to the leakage current will be shown. The possible impact of the high local power dissipation in the surrounding of the overgrown micropipe will be discussed and long term degradation mechanisms will be described. Failure simulation under laboratory conditions shows a clear correlation between the position of overgrown micropipes and the location of destructive burnt spots.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

925-928

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.925

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Online since:

May 2005

Authors:

Roland Rupp, Michael Treu, Peter Türkes, H. Beermann, Thomas Scherg, Herbert Preis, Hans Cerva

Keywords:

Degradation Mechanism, Device Reliability, Overgrown Micropipes

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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