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Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes

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Abstract:

Forward current-voltage characteristics, reverse current recovery and post-injection voltage decay are measured for high voltage 4H-SiC p+non+-diodes. The effects of both minority carrier lifetime in diode no-base and injection coefficient of p+-emitter are investigated with respect to device performance at high injection levels.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

973-976

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.973

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Online since:

May 2005

Authors:

Pavel A. Ivanov, Michael E. Levinshtein, Tigran T. Mnatsakanov, John W. Palmour, Ranbir Singh, Kenneth G. Irvine, Mrinal K. Das

Keywords:

Base Modulation, Emitter Injection Coefficient, Junction Diodes, Minority Carrier Lifetime, Silicon Carbide (SiC)

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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