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HomeSolid State PhenomenaSolid State Phenomena Vols. 63-64Defect Characterization in...

Defect Characterization in Metal-Oxide-Semiconductor Field-Effect-Transistors with Trench Gates by Electron Beam-Induced Current Technique

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Beam Injection Assessment of Defects in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 63-64)

Pages:

407-412

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.63-64.407

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Online since:

December 1998

Authors:

H. Tomokage, Y. Ishiwata, H. Souno, Masahiro Kawakami, N. Sonoda

Keywords:

Defect, Electron Beam Induced Current (EBIC), Metal-Oxide-Semiconductor (MOS), Trench Gate

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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