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Silicon Based Light Emitters for On-Chip Optical Interconnects

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Abstract:

Electroluminescence of B and P implanted samples has been studied. P implantation is found to have a similar effect on light emission as B implant. The band-to-band (BB) luminescence of P implanted diodes is observed to increase by more than one order of magnitude upon rising the temperature and an internal efficiency of 2 % has been reached at 300 K. An efficiency larger than 5% seems to be reachable. The strong BB line emission at 1.1 &m is attributed to high bulk SRH lifetime. The BB line escapes from the substrate below the p-n junction. It is not due to the implantation-related defects/dislocations. The luminescence spectrum can be tailored to achieve dominance of the dislocation-related D1 line at about 1.5 &m. It is observed that a regular periodic dislocation network, formed by Si wafer direct bonding with a specific misorientation, exhibits even at 300 K only D1 photoluminescence. Such a dislocation network is believed to be a serious candidate to gain an efficient Si-based light emitter.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

749-754

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.749

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Online since:

December 2005

Authors:

Martin Kittler, Tzanimir Arguirov, Winfried Seifert, X. Yu, Manfred Reiche

Keywords:

Dislocation, EL, Implantation, Light Emitting Diode (LED), Luminescence, PL, Silicon, Wafer Bonding

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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