Paper Titles
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Integrated Approach for Modeling of Heat Transfer and Microdefect Formation during CZ Silicon Single Crystal Growth
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Dislocations in Silicon as a Tool to Be Used in Optics, Electronics and Biology
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Two Paths of Oxide Precipitate Nucleation in Silicon
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Engineering of Dislocation-Loops for Light Emission from Silicon Diodes
p.303
A Comparative Analysis of Structural Defect Formation in Si+ Implanted and then Plasma Hydrogenated and in H+ Implanted Crystalline Silicon
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The Temperature Evolution of the Hydrogen Plasma Induced Structural Defects in Crystalline Silicon
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Electrical Uniformity of Direct Silicon Bonded Wafer Interfaces
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Structure of Magnetically Ordered Si:Mn
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Engineering of Dislocation-Loops for Light Emission from Silicon Diodes

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Abstract:

Luminescence properties of silicon light emitting diodes with engineered dislocation loops were investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band) and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band signal intensity were performed. The results are in agreement with the model for dislocation luminescence, which suggests rediative transition between two, dislocation-related shallow levels. A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier injection level in electroluminescence and photoluminescence. A supposition about existence of strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely, in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

303-308

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.303

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Online since:

October 2007

Authors:

Teimuraz Mchedlidze, Tzanimir Arguirov, Martin Kittler, T. Hoang, Jisk Holleman, P. LeMinh, Jurriaan Schmitz

Keywords:

Dislocation Loops, Dislocation Related Luminescence, Si-Based LED

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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