[1]
A. Barkai, Y. Chetrit, O. Cohen, et al., J. Opt. Netw. Vol. 6 (2007), p.25.
Google Scholar
[2]
L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U. Keil, and T. Franck, Opt. Express Vol. 13 (2006), p.3129.
DOI: 10.1364/opex.13.003129
Google Scholar
[3]
J. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, L. C. Kimerling, J. Chen, F. Ö. Ilday, F. X. Kärtner, and J. Yasaitis Appl. Phys. Lett. Vol. 87 (2005), p.103501.
DOI: 10.1063/1.2037200
Google Scholar
[4]
H. -W. Hübers, S. G. Pavlov and V. N. Shastin, Semicond. Sci. Technol. Vol. 20 (2005), p. S211.
Google Scholar
[5]
O. Boyaraz and B. Jalali, Opt. Express, Vol. 12 (2004), p.5269; H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang and M. Paniccia, Nature, Vol. 433 (2005), p.292.
DOI: 10.1038/nature03273
Google Scholar
[6]
S. G. Pavlov, H. -W. Hübers, J. N. Hovenier, T. O. Klaassen, D. A. Carder, P. J. Phillips, B. Redlich, H. Riemann, R. Kh. Zhukavin, and V. N. Shastin, Phys. Rev. Lett. Vol. 96 (2006), p.037404.
DOI: 10.1103/physrevlett.96.037404
Google Scholar
[7]
L. Tsybeskov, K. L. Moore, D. G. Hall, and P.M. Fauchet, Phys. Rev. B Vol. 54 (1996).
Google Scholar
[8]
L. T. Canham, W. Y. Leong, M. I. J. Beale, T. I. Cox, and L. Taylor, Appl. Phys. Lett. Vol. 61 (1992), p.2563; P. M. Fauchet, J. Luminescence, Vol. 70 (1996), p.294; J. -C. Lin, W. -L. Chen, and W. -C. Tsai, Opt. Express Vol. 14 (2006), p.9764.
Google Scholar
[9]
Technology and Applications of Amorphous Silicon, Springer Series in Materials Science, Vol. 37, R. A. Street, Ed., Springer-Verlag, Berlin (2000).
Google Scholar
[10]
I. H. Campbell and P. M. Fauchet, Solid St. Communic. Vol. 58, (1986), p.739; H. Richter, Z. P. Wang and L. Ley, Solid St. Communic. Vol. 39 (1981), p.625.
Google Scholar
[11]
S. Uma, A. D. McConnell, M. Asheghi, K. Kurabayashi, and K. E. Goodson, Int. J. Thermophysics, Vol. 22 (2001), p.605.
DOI: 10.1023/a:1010791302387
Google Scholar
