Paper Titles
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Preface
Casting Single Crystal Silicon: Novel Defect Profiles from BP Solar's Mono2 TM Wafers
p.1
Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon
p.9
Impact of Iron and Molybdenum in Mono and Multicrystalline Float-Zone Silicon Solar Cells
p.15
Divacancy Induced Improvement for Stabilization of Silicon Conductivity versus Temperature
p.21
Mechanism of Shunting of Nanocrystalline Silicon Solar Cells Deposited on Rough Ag/ZnO Substrates
p.27
Advances in Structural Characterization of Thin Film Nanocrystalline Silicon for Photovoltaic Applications
p.33
Origination and Properties of Dislocations in Thin Film Nitrides
p.39

Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon

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Abstract:

The carrier recombination activities of small angle (SA) grain boundaries (GBs) in multicrystalline Si (mc-Si) were systematically investigated by electron-beam-induced current (EBIC). At 300 K, general SA-GBs with tilt angle from 0° to 10° showed weak EBIC contrast (0- 10%) with the maximum appeared at 2°. At low temperature (100 K), all the SA-GBs showed strong EBIC contrast despite the tilt angle. Possible explanations for the variation of the EBIC contrast were discussed in terms of boundary dislocations.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

9-14

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.9

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Online since:

October 2007

Authors:

J. Chen, Takashi Sekiguchi, S. Ito, De Ren Yang

Keywords:

EBIC, mc-Si, Small Angle Grain Boundary

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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