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Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation

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Abstract:

This paper investigates the transient induced currents by energetic carbon ions in 6H-SiC MOSFETs and the carrier dynamic response due to such a heavy ion collision is simulated by Technology Computer Aided Design (TCAD). It was found that a heavy ion strike induces a bipolar effect on the transistor, whereby the current transients can vary in both polarities. And this has been attributed to the inherent in the MOSFET is a parasitic bipolar junction transistor.

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

1013-1016

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.1013

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Online since:

April 2010

Authors:

Kin Kiong Lee, Jamie Steward Laird, Takeshi Ohshima, Shinobu Onoda, Toshio Hirao, Hisayoshi Itoh

Keywords:

Charge Collection Efficiency, Ion Beam Induced Current (IBIC), Ion Implantation, MOSFET

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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