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Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation

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Abstract:

The effect of electron irradiation on the charge collection efficiency of a 6H-SiC p+n diode has been studied. The diodes were irradiated with electrons of energies from 100 keV to 1 MeV. The charge collection efficiencies of the samples were measured for alpha particles before and after the electron irradiation. The electron irradiation at 100 keV does not affect the charge collection efficiency, while the electron irradiation at 200 keV or higher decreases the charge collection efficiency. The degree of the degradation of the diodes correlates with the energy of the electron irradiation.

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

921-924

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.921

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Online since:

April 2010

Authors:

Naoya Iwamoto, Shinobu Onoda, Takeshi Ohshima, Kazutoshi Kojima, Atsushi Koizumi, Kazuo Uchida, Shinji Nozaki

Keywords:

Bipolar Diode, Charge Collection Efficiency, Electron Irradiation, Particle Detector

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] P.J. Sellin and J. Vaitkus, Nucl. Instr. and Meth. A, Vol. 557 (2006), p.479.

Google Scholar

[2] S. Onoda, N. Iwamoto, M. Murakami, T. Ohshima, T. Hirao, K. Kojima, K. Kawano, and I. Nakano, Mater. Sci. Forum, Vol. 615-617 (2009), p.861.

DOI: 10.4028/www.scientific.net/msf.615-617.861

Google Scholar

[3] F. Nava, P. Vanni, M. Bruzzi, S. Lagomarsino, S. Sciortino, G. Wagner, and C. Lanzieri, IEEE Trans. Nucl. Sci. Vol. 51 (2004), p.238.

DOI: 10.1109/tns.2004.825095

Google Scholar

[4] N. Iwamoto, S. Onoda, S. Hishiki, T. Ohshima, M. Murakami, I. Nakano, K. Kawano, Mater. Sci. Forum, Vol. 600-603 (2009) p.1043.

DOI: 10.4028/www.scientific.net/msf.600-603.1043

Google Scholar

[5] F. Moscatelli, A. Scorzoni, A. Poggi, M. Bruzzi, S. Sciortino, S. Lagomarisino, G. Wagner, I. Mandic, R. Nipoti, IEEE Trans. Nucl. Sci., Vol. 53 (2006), p.1557.

DOI: 10.1109/tns.2006.872202

Google Scholar

[6] S. Onoda, T. Ohshima, T. Hirao, K. Mishima, S. Hishiki, N. Iwamoto, K. Kojima, and K. Kawano, IEEE Trans. Nucl. Sci. Vol. 54 (2007), p. (1953).

DOI: 10.1109/tns.2007.910203

Google Scholar

[7] L. Strasta, J.P. Bergman, E. Janzén, A. Henry, J. Lu, J. Appl. Phys., Vol. 96 (2004), p.4909.

Google Scholar

[8] K. Danno and T. Kimoto, J. Appl. Phys., Vol. 101 (2007), p.103704.

Google Scholar

[9] J.F. Seely, B. Kjornrattanawanich, G.E. Holland, R. Korde, Optics Letters, Vol. 30 (2005), p.3120.

Google Scholar

[10] J.R. Srour, IEEE Nuclear and Space Radiation Effects Conference, Short Course, Section IV (1988).

Google Scholar

[11] J. Lefèvre, J. Costantini, S. Esnouf, and G. Petite, J. Appl. Phys., Vol. 105 (2009).

Google Scholar