Paper Titles
Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC
p.453
Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis
p.457
Influence Of Growth Conditions on Irradiation Induced Defects in 4H-SiC
p.461
Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation
p.465
New Insight in Scandium-Mediated Growth Techniques: Sc-Related Defects in 4H-SiC and 6H-SiC
p.469
Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition
p.473
SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts
p.477
Atomic Crack Defects Developing at Silicon Carbide Surfaces Studied by STM, Synchrotron Radiation-Based μ-spot XPS and LEEM
p.481
Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps
p.487

New Insight in Scandium-Mediated Growth Techniques: Sc-Related Defects in 4H-SiC and 6H-SiC

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Abstract:

Scandium can be used to influence the stoichiometry of SiC during growth of the hexagonal polytypes. Using PL-EPR and total energy calculations in the framework of density functional theory, scandium is predicted to be built in predominantly at the Si-sublattice in form of ScSi acceptors with acceptor levels at 0.55 eV (6H-SiC) and 0.48 eV (4H-SiC). In addition, new PL-EPR spectra are found with a large anisotropy in the g-tensor suggesting defect pairs as an origin.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

469-472

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.469

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Online since:

September 2007

Authors:

Uwe Gerstmann, Siegmund Greulich-Weber, E. Rauls, Johann Martin Spaeth, Ekaterina N. Kalabukhova, E.N. Mokhov, Francesco Mauri

Keywords:

Crystal Growth, Density Function Theory (DFT), g-Tensor, Paramagnetic Resonance, Scandium

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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