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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201On the Behaviour of the Divacancy in Silicon...

On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1147-1152

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1147

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Online since:

November 1995

Authors:

M.-A. Trauwaert, Jan Vanhellemont, H.E. Maes, A.-M. Van Bavel, G. Langouche, Andre Stesmans, Paul Clauws

Keywords:

Divacancy Anneal, DLTS, Irradiation, Oxygen, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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