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Defects in Semiconductors 17

Materials Science Forum Volumes 143 - 147

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• p99 Donors in Wurtzite GaN Films: A Magnetic Resonance and Photoluminescence Study   [ 275 K ]
  Authors: W.E. Carlos, Jaime A. Freitas Jr., M. Asif Khan, D.T. Olson, J.N. Kuznia
• p105 The Bound Exciton Model for Isoelectronic Centers in Silicon   [ 262 K ]
  Authors: Gordon Davies, Maria Helena Nazaré
• p111 Near-Surface Reactions of Gold and Silver in Silicon   [ 216 K ]
  Authors: H. Feichtinger, E. Sturm
• p117 A New Photoluminescent Center in Mercury-Doped Silicon   [ 273 K ]
  Authors: Anne Henry, Bo Monemar, Peder Bergman, J. Lennart Lindström, Y. Zhang, James W. Corbett
• p123 Electrical and Optical Characterization of Magnesium- and Calcium-Related Defect Centers in Silicon   [ 5 M ]
  Authors: C. Häßler, Gerhard Pensl
• p129 Fast Neutron Transmutation Reactions in Si - A New Way of Introduction of Mg-Related Centers   [ 173 K ]
  Authors: N.A. Sobolev, Valentin V. Emtsev, B.N. Gresserov, P.M. Klinger, D.S. Poloskin, E.P. Shabalin, Elena I. Shek, Yu.V. Vyzhigin
• p135 Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A β-NMR Study on the Fermi-Level Dependence   [ 249 K ]
  Authors: H.-P. Frank, E. Diehl, K..-H. Ergezinger, Bernd Fischer, Bernd Ittermann, F. Mai, K. Marbach, S. Weißenmayer, G. Welker, H. Ackermann, H.J. Stöckmann
• p141 EPR/ENDOR Investigation on the Nature of Heat Treatment Centers in Silicon   [ 315 K ]
  Authors: N. Meilwes, Johann Martin Spaeth, Valentin V. Emtsev, Gagik A. Oganesyan, W. Götz, Gerhard Pensl
• p147 Role of Point Defects in Oxygen Agglomeration in Si   [ 301 K ]
  Authors: Michio Tajima, Hiroshi Takeno, M. Warashina, Takao Abe
• p153 DLTS Studies of Thermally Treated Carbon-Rich Silicon   [ 228 K ]
  Authors: N.B. Urli, V. Borjanović
• p159 A Metastable Selenium-Related Center in Silicon   [ 291 K ]
  Authors: Anne Henry, E. Sörman, Sven Andersson, W.M. Chen, Bo Monemar, Erik Janzén
• p165 The Excited ⁵T₁ State of the Fe_i^o -Center in Silicon   [ 250 K ]
  Authors: A. Thilderkvist, G. Grossmann, Mats Kleverman, Hermann G. Grimmeiss
• p171 Identification of the Iron-Boron Line Spectrum in Silicon   [ 300 K ]
  Authors: S. Ghatnekar-Nilsson, Mats Kleverman, P. Emanuelsson, Hermann G. Grimmeiss
• p177 Ab-Initio Total Energy Calculation of Iron-Aluminum Pairs in Silicon   [ 239 K ]
  Authors: H. Weihrich, Harald Overhof
• p183 On the Sensitivity of Optical Reflectivity Spectra to the Bulk Defects in Semiconductors - Example of Crystalline Si   [ 203 K ]
  Authors: Ryszard Iwanowski, B.J. Kowalski, B.A. Orłowski, Jadwiga Bak-Misiuk